Journal of the Magnetics Society of Japan
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
Magnetism
Epitaxial Growth, Magnetic and Transport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs
M. Tanaka, T. Hayashi, T. Nishinaga, H. Shimada
Author information
Keywords: GaMnAs, III-V based diluted magnetic semiconductor, low-temperature molecular beam epitaxy, magnetotransport properties of GaMnAs, magnetoresistance, extraordinary Hall effect
JOURNAL OPEN ACCESS

1997 Volume 21 Issue 4_2 Pages 393-396

Details
Download PDF (269K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
A new III-V based diluted magnetic semiconductor, GaMnAs has been successfully grown on (001) GaAs using low-temperature molecular beam epitaxy. The GaMnAs films have p-type conduction with hole concentrations ranging from mid 1017 to low 1020 cm-3, exhibiting ferromagnetic ordering at low temperatures. Magnetic and magnetotransport properties are studied at low temperature.
Content from these authors
© 1997 by The Magnetics Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Successor

Journal of the Magnetics Society of Japan

Share this page
feedback
 Top