抄録
We investigated the annealing effect on magnetoresistance (MR) in Cu100-xCox (x=10-40 at%) alloy films. The samples were prepared by rf-sputtering onto liquid-nitrogen-cooled Si substrates, and annealed at 500°C for 10 min, 1h, and 10h. For x≤20 at%, we found GMR behavior even in the as-deposited state. In other words, the resistivity decreases as the applied field increases, and the change in the resistivity is very large in high fields. The MR saturates more easily, but the magnitude of MR is smaller on annealing. For x≥30 at%, on the other hand, the MR in the as-deposited state shows anisotropic MR behavior, which is typical of a simple ferromagnetic metal. The MR behavior changes to GMR on annealing.
