抄録
The spin-tunneling magnetoresistive effect was investigated for NiFe/Al2O3/Co junctions with small junction areas down to 3× 3 μm2, fabricated by photolithography. About 75% of the junctions prepared exhibited the spin-tunneling magnetoresistive effect, with a maximum value of around 2% at room temperature. Negative interlayer exchange-coupling (J≤O) was found in these junctions. The strength of the coupling tended to increase with decreasing junction area.
