抄録
Equipment used in the high-frequency band can accomplish thin styling, miniaturization, and being an integrated circuit according to the rise of the frequency band used. Electrical circuit wiring and parts are often close to a generation source of GHz-range frequencies and a high-frequency central processing unit, and are exposed to high-frequency noise.
The purpose of this investigation is to create a monolithic noise suppression device that decreases the frequency noise in the GHz range by means of a soft magnetic thin-film core. A monolithic 3-step LC low-pass filter was constructed from a thin-film helical inductor and a thin-film MIM (metal/insulator/metal) capacitor, and obtained high attenuation characteristics of - 50 dB at 1.25 GHz and band attenuation characteristics with a width of about 1 GHz.
Moreover, magnetic loss simulation suggests that effective resistivity of the CoFeSiB/SiO2 multilayered film used as a film inductor is approximately 500 μΩcm.
