抄録
The crystalline quality and deposition mechanism of iron oxide films prepared by metalorganic chemical vapor deposition (MOCVD) at low pressure were investigated. The films were deposited at substrate temperatures of above 673 K. RHEED measurements showed that Fe3O4 thin films epitaxially grown on c-plane sapphires have excellent crystal quality and extremely flat surfaces. The deposition process for the films was well explained by the Langmuir-Hinshel-wood mechanism, in which an oxidization reaction occurs between molecules of an iron source and oxygen adsorbed onto the surface. These results suggested that atomic layer epitaxy of ferrite thin films may be achieved by alternately adsorbing the iron source and the oxygen.
