抄録
The relationship between CoxFe1-x(X= 100, 90, 75, 60, 50) and the tunneling magnetoresistive effect was investigated. CoxFe1-x, which have high saturated magnetization, were selected as the ferromagnetic materials. The fabrication process was successful in a TMR junction with large MR ratio. The maximum MR ratio for Co75Fe25 junctions yielded 40.7%. The MR ratios for Co75Fe25 junctions were almost constant as a function of the junction area, which meant an MR ratio over 40% didn't contain a geometrically enhanced MR effect. Vh, defined as the point where the TMR decreased to half its 1mV bias value, lay between 360 and 455 mV. The bias dependence of TMR was related to barrier height in all CoxFe1-x junctions. As barrier height increased, weaker bias dependence was obtained.
