日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
多層膜・人工格子・交換結合
対向ターゲット式スパッタ法によるMgO単結晶基板上へのNi-Fe/Mn-Ni積層膜のエピタキシャル成長
甲野藤 真角田 匡清高橋 研
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ジャーナル オープンアクセス

2000 年 24 巻 4_2 号 p. 631-634

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抄録
Ni-Fe / Mn-Ni bilayers were fabricated at room temperature on MgO{100} and MgO{110} single-crystal substrates by the facing-targets dc sputtering method. The Ni-Fe layer was deposited by applying a bias voltage. After the deposition of the Ni-Fe layer, an Mn-Ni layer was deposited on the Ni-Fe layer. The Ni-Fe and γ-Mn-Ni layers were grown by epitaxy and highly oriented in their crystal axes in the film plane. In the case of the MgO{100} substrate, the preferred orientations of Ni-Fe and γ-Mn-Ni were (001), and the directions of Ni-Fe[100] and γ-Mn-Ni[100] were parallel to MgO[100]. The crystal structure of γ-Mn-Ni was fct, and c/a decreased from 1.01 to 0.984 when the Mn-Ni layer thickness increased from 200 to 1000 Å. In the case of the MgO{110} substrate, the preferred orientations of Ni-Fe and γ-Mn-Ni were (110), and the directions of Ni-Fe[001] and γ-Mn-Ni[001] were parallel to the direction of MgO[001]. The crystal structure of γ-Mn-Ni was fct (c/a = 0.978).
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© 2000 (社)日本応用磁気学会
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