論文
ラジカル酸化法で作製した高耐熱強磁性トンネル接合
2002 年 26 巻 6 号 p. 839-842
詳細
2002 年 26 巻 6 号 p. 839-842
The annealing temperature dependence of the tunnel magnetore-sistance (TMR) ratio for ferromagnetic tunnel junctions prepared by various oxidation methods was measured. A junction prepared by plasma oxidation showed a TMR ratio of 31.4% before heat treatment, and this ratio increased to 49% after annealing at 300°C. On the other hand, the TMR ratio for a junction prepared by radical oxidation showed a maximum at 350°C. The enhancement of the thermal stability resulted from the different oxidation progress depending on the oxidation method.
