Abstract
The structural, magnetic, and electrical properties of sputtered ZnxFe3-xO4 thin films were investigated. A spinel structure was obtained for samples annealed above 673 K. The magnetization at 10 kOe of a sample sputtered in Ar and annealed at 873 K was 450 emu/cm3. Magnetization decreased in samples annealed above 873 K, as a result of evaporation of Zn and an increase in the thickness of the insulating layer. A MR ratio of about 4.3 % was observed at T = 300 K in a sample sputtered in Ar and O2 mixed gas, and MR curve was of a granular type. However, because the Zn was completely evaporated at this sample, the MR was associated with the Fe3O4 grains and the α-Fe2O3 boundary.
