論文
ハーフメタル強磁性体Sr2FeMoO6上への絶縁層のヘテロエピタキシー
2004 年 28 巻 4 号 p. 581-584
詳細
2004 年 28 巻 4 号 p. 581-584
Insulator layers of Nd2CuO4 (NCO) and Ba0.4Sr0.6TiO3 (BSTO), which have a good lattice matching to SFMO, were epitaxialy grown on SFMO by magnetron sputering in different preparation atmospheres (Ar, Ar+H2, Ar+O2). The quality of SFMO was evaluated by measurement of magnetization and crystal structure. We suggest that insulator materials having a small misfit to SFMO and the same preparation condition (Ar+H2) as SFMO are suitable as insulators of TMR junctions. We also demonstrated the hetero-epitaxial growth of SFMO/NCO/SFMO trilayers.
