スピンエレクトロニクス
CoFeB/MgO/CoFeBトンネル接合におけるスピン注入磁化反転に対する困難軸方向磁場の影響
2007 年 31 巻 2 号 p. 98-102
詳細
2007 年 31 巻 2 号 p. 98-102
The dependence of critical current density (Jc) for current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (Hhard) was investigated in CoFeB/MgO/CoFeB magnetic tunnel junctions. The Jc and the intrinsic current density (Jc0), which is derived from the dependence of Jc on pulse duration, decreased as |Hhard| increased. As the reduction ratios of Jc0 while applying Hhard depend on the anisotropy field of junctions (Hk), the initial angle of magnetization, affected by Hhard and Hk, is related to the reduction in Jc0. These results are discussed in terms of the energy barrier for CIMS and the spin transfer efficiency.
