Dual conductor-sheet magnetic bubble devices are attractive as high-performance memory components because of their high-frequency performance and designability. This paper describes a method of improvement for major/minor organization including transfer gate carried out with scaled-up models and computer simulation. Computer simulation for 1 MHz operation was performed with a set of parameters based on the high-mobility film of (YBi)3(GaFe)5O12 grown on a (110) garnet substrate. It has been clarified, through our method, that homogenization in the size and the depth of the potential wells is essential for achieving good performance. In order to examine the possibility of low power dissipation, the relation between coercive force Hc and minimum drive-current density Jmin has been investigated.
