抄録
The rate of crystallization of synthesized albite glass under pressures ranging up to 20 kb and temperatures ranging up to 850°C is investigated. A piston-cylinder device is used and the rate is estimated by measuring changes in electrical conductivity.
The results are complied assuming the Avrami's equation for the fraction transformed, X: 1-X=exp(-Atn). It is shown that the value of n changes in the initial part of crystallization and also it is both pressure and temperature dependent.
It is also shown that the rate of crystallization depends on both pressure and temperature and further the applications of both pressure and temperature have a profound effect on increasing the rate of crystallization.
