Meeting Abstracts of the Physical Society of Japan
Online ISSN : 2189-0803
ISSN-L : 2189-0803
56.1.4
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Enhancing Effects of Hydrogen on Recovery of Implantation-Induced Defects by Phosphorus Ion in Silicon
Y. KamiuraY. YamashitaY. YamamotoT. Ishiyama
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Pages 873-

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© 2001 The Physical Society of Japan
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