抄録
Low-energy excitation in Kondo semiconductors CeNiSn and CeRhSb, has been investigated by the measurement of 119Sn and 123Sb nuclear spin-lattice relaxation rate, 1/T1. From a T3-like temperature dependence of 1/T1 for both compounds, it has been intuitively concluded that the pseudo energy gap with the V-shaped structure is formed in the effective density of states for heavy quasi-particles. The band width of D=210, K and the pseudo energy gap of Δ=28, K in CeRhSb are almost two times larger than those of CeNiSn (D=140, K and Δ=14, K), respectively. Below 0.4, K and 0.8, K for CeNiSn and CeRhSb, respectively, the T1T=const. behavior has been commonly observed in the two compounds, indicative of the presence of a residual density of states at the Fermi level. Impurities and/or imperfection in the samples easily mask the intrinsic V-shaped structure of the energy gap at very low temperatures.
