Phase Boundaries between Quantum Hall Metaland Hall Insulator in Si-MOSFET's and Many-Body Enhancementof Valley- and Zeeman-Splitting

Tohru Okamoto; Yoshinori shinohara; Shinji Kawaji; Atsuo Yagi

doi:10.1143/jpsj.64.2311

Tohru Okamoto, Yoshinori shinohara, Shinji Kawaji, Atsuo Yagi

著者情報

キーワード: quantum Hall effect, integer quantum Hall effect, Hall insulator, many-body exchange interaction, two-dimensional electron system, localization

ジャーナル認証あり

1995 年 64 巻 7 号 p. 2311-2315

DOI https://doi.org/10.1143/jpsj.64.2311

詳細

抄録

We have experimentally studied metal-insulator transitions in a two-dimensional electron system in Si-MOSFET's in a magnetic field and derived a phase diagram on aν (Landau level filling factor) vs. disorder (resistivity in the absence of magnetic field)plane. Structures of stabilized phase boundaries at ν =1 and ν =2 are discussed based on many-body enhancement of valley- and Zeeman-splitting, respectively.

責任著者(Corresponding author)

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