1997 年 66 巻 1 号 p. 34-37
We study the photon statistics of semiconductor light-emitting devicesat a low-injection level, using quantum Langevin equationswhich take account ofnonradiative processes and carrier-number dependence of lifetimes.Assuming the noise correlations which are consistent withthe fluctuation-dissipation theorem, we derive new formulae for the photon Fano factor, which represents the photon statistics as afunction of the pump (injection) statistics.The formulae are applicable to the general cases when the quantum efficiencyη differs from the differential quantum efficiency ηdand when emission efficiency and/or detection efficiencyof photons are different among different photon modes.The formulae agree with recent experimental results, which cannot be explained by the previous theories.It is also shown that a Poissonian pump can produce eithersub-Poissonian light (if ηd < η at the running point) orsuper-Poissonian light (if ηd > η).
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