Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Metal-Semiconductor Transition and Antiferromagnetic State in f-Electron Systems
Makoto IsodaYoshinori Takahashi
著者情報
ジャーナル 認証あり

1997 年 66 巻 10 号 p. 3224-3230

詳細
抄録

The stability of antiferromagnetism and the metal-semiconductor transition are investigated in strongly correlated f-electron systems with UNiSn in mind. We introduce an effective Hamiltonian which includes the inter-atomic antiferromagnetic exchange interaction between nearest neighbor f-spins as a result of hybridization between conduction- and localized f-electrons. Based on the model, the phase diagram is investigated with regard to the magnetic and the metal-semiconductor phase transitions. We found the possible stability of the antiferromagnetic state even in the metallic phase, which was already suggested by our previous study using the perturbation expansion in the paramagnetic semiconducting state. The dependence of the Néel temperature on the energy gap is also shown to agree qualitatively with the observed behavior.

著者関連情報

この記事は最新の被引用情報を取得できません。

© The Physical Society of Japan 1997
前の記事 次の記事
feedback
Top