Low Temperature Dielectric Dispersion in Sn2P2S6

Makoto Iwata; Akira Miyashita; Yoshihiro Ishibashi; Keiichi Moriya; Shinichi Yano

doi:10.1143/jpsj.67.499

Low Temperature Dielectric Dispersion in Sn₂P₂S₆

Makoto Iwata, Akira Miyashita, Yoshihiro Ishibashi, Keiichi Moriya, Shinichi Yano

著者情報

キーワード: dielectric constant, activation energy, Sn₂P₂S₆ stannous thiohypodiphosphate, Cole-Cole plot, Arrhenius law, phase transition

ジャーナル認証あり

1998 年 67 巻 2 号 p. 499-501

DOI https://doi.org/10.1143/jpsj.67.499

詳細

抄録

The dielectric dispersion in single crystals of stannous thiohypodiphosphate, Sn₂P₂S₆, which shows ferroelectricity at room temperature, was measured in the frequency range between 100Hz and 10MHz below room temperature. We found that the non-Debye type dielectric dispersion appears below 100, K. From the dielectric dispersion, we determined the activation energy and the attempt frequency by assuming the Arrhenius relation. The nature of the orientational dynamics in the dipole system of Sn₂P₂S₆ was discussed.

責任著者(Corresponding author)

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