抄録
The dc voltage generation associated with cyclotron resonance (CR) and impurity cyclotron resonance (ICR) in n-InGaAs and n-InSb has been studied. In both materials, it is found that the observed voltage decreases rapidly with increasing temperature and the line shape has similar structure to the absorption coefficient. Using a thermomagnetic model where a heat current induces a voltage through the Nernst-Ettingshausen effect, we have explained the experimental results. This technique allows us to investigate resonant absorption for a sample in which transmission measurements are difficult to perform, as well as to study the mechanism of phonon transport through the sample.
