抄録
Magnetization process and susceptibility measurements at high pressures up to P=12, kbar have been performed on single-crystalline FeSi in the temperature range from T=5, K to 300, K using a SQUID magnetometer with a miniature high-pressure clamp cell. From the analyses of these data, the volume dependence of the susceptibility χ for T=300, K is estimated to be d ln χ /d ln V=10.3. Using an exchange enhanced semiconductor model, the energy gap for T=0, K, Eg0, and the volume dependence of Eg0, d ln Eg0/d ln V, are evaluated to be 62, meV for P=0, kbar and -10.8, respectively.
