Deformation Behavior of Glissile Interstitial Clusters: An Atomistic Study

抄録

The deformation behavior of glissile interstitial clusters containing 7, 37, 187 and 517 interstitials were investigated for FCC copper in this paper by molecular dynamics simulation. The results show that: The interaction between small interstitial clusters (containing less than 37 SIAs) and dislocation can generate many possible configurations depend on the cluster’s size and their relative position to dislocation. The classical dislocation theory cannot be used to describe such reactions. Clusters containing 7-SIAs can be incorporated into dislocation easily and then travel quickly along the dislocation to free surface. Clusters containing 37-SIAs can be incorporated into and then slip with dislocations under stress. Clusters containing 187-SIAs cannot be incorporated into dislocation. Atomistic resolution slipping process of perfect loop was firstly reported in this study. Perfect loops containing 517-SIAs were elongated due to the difference in mobility of every segments and one pair of screw dislocation were generated between prismatic planes.