Metal–Insulator Transition in the Two-Orbital Hubbard Model at Fractional Band Fillings: Self-Energy Functional Approach
2007 年 76 巻 9 号 p. 094712
詳細
2007 年 76 巻 9 号 p. 094712
We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths. It is found that the Mott insulating phases are realized at commensurate band fillings. Furthermore, it is clarified that the orbital selective Mott phase with one orbital localized and the other itinerant is stabilized even at fractional band fillings in the system with different bandwidths.
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