抄録
We studied the electronic structures of MnSi(100) single crystal by angle-resolved photoemission spectroscopy (ARPES). The observed ARPES spectra show a sharp peak near the Fermi level corresponding to the large density of Mn 3d states. The intensity of this sharp peak increases at low temperature, which is explained by the decrease of thermal broadening effects in the spectra. The experimentally obtained valence bandwidth and the energy dispersion of Mn 3d originated bands show agreement with those expected from the band calculation based on the local density approximation. The results reveal a weak appearance of electron correlation effects in the ARPES spectra of MnSi(100).