Step Instabilities on Si(111) Vicinal Face near 1×1↔7×7 Transition Temperature during Sublimation
2009 年 78 巻 12 号 p. 124602
詳細
2009 年 78 巻 12 号 p. 124602
On a Si(111) vicinal face near the structural transition temperature (860 °C), the 7×7 structure and 1×1 structure coexist on a terrace. The 7×7 structure is on the upper side of steps and the 1×1 structure is on the lower side of steps. The diffusion coefficient on the 1×1 structure is larger than that on the 7×7 structure. In this paper, taking account of the difference in the diffusion coefficient, we study the possibility of step instabilities, step wandering and step bunching, occuring during sublimation.
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