抄録
When the squarewave pulses of 5∼160 μs duration with the repetition rate of 1,000 pulses per sec. are impressed across the germanium p−n junction of grown type in the reverse direction, the critical voltage of the avalanche beginning rises up with the temperature of the specimen.
On the other hand, the onset voltage of negative resistance decreases with the increasing ambient temperature of specimens and duration of pulse impressed across the p−n junction. Furthermore, even if the ambient temperature of specimens is widely changed, the barrier temperature, which is estimated from the saturation current in reverse direction, is almost constant. Therefore, the temperature rise in barrier layer is also necessary for the onset of negative resistance, though the avalanche ionization is essential.
At the negative resistance region, the property of jumping or oscillation occurs. Which of the two prevails, depends on the circuit resistance and other experimental conditions. These properties seems to have relation with the barrier temperature.
