抄録
The Hall mobility of electrons has been measured between 90∼400° K with many dark-conducting CdS/Ga, CdS/Cl and CdS/Cd single crystals. Among these results several typical data taken with crystals having non-degenerate carrier concentrations were chosen for analysing temperature dependence of the mobility. Assuming the observed mobility at lower temperatures is slightly influenced by the impurity scattering and Conwell Weisskopf formula is available here, it has been found that the plausible lattice scattering mobility after correction is well given by the following polar scattering form
μL=A{exp(Θ⁄T)−1} with A=92.5±15 cm2/volt sec and Θ=370±30°K.
In order to reach this result it is necessary to suppose there are about 1017∼1018 uncontrollable deep-lying centers per unit volume in the present crystals, which permanently capture the conduction electrons and act as scatterers. The value of the characteristic temperature seems to be reasonable as compared with the one (Θ=250∼300°K) previously obtained by Philips group in view of the infrared absorption band (Θ′=335°K) and the fine structure data in the edge emission (Θ=460°K).
