Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Crystal Structure of Silicon Carbide of 174 Layers
Takanori Tomita
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1960 年 15 巻 1 号 p. 99-105

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A new modification of silicon carbide crystal, having rhombohedral symmetry and a unit cell composed of 174 layers, was found by X-ray study. The cell size and symmetry were determined in a similar way as in a previous study of silicon carbide of 594 layers. The structure, namely the stacking order of Si–C layers, of the new monification was determined by comparing the visual intensity with those calculated for a number of models. The structure is represented as {C(CCH)7C3(CCH)11}×3 by Wyckoff’s notation.

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