Regrowth of Germanium Single Crystal from Indium Melt

Abstract

A single crystal of n-type germanium was heated with a small piece of indium on it, and subsequently cooled rapidly to cause regrowth of the p-type germanium on the substract germanium from the indium melt. After removal of the indium, the growth pattern on the surface of the regrown germanium was observed. In some cases relatively large growth pyramids were observed, while in others flat patterns with threefold or sixfold symmetry were observed. After the detailed examination, it was concluded that the former represents the growth due to the screw dislocations and its center is dislocation array resulting from thermal strain. The shape and size of the growth pyramid vary with the number of screw dislocations which exist at center. The latter seems to be caused by surface nucleation.