X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single Crystals

Abstract

Lattice defects in silicon single crystals are observed using Lang’s technique of X-ray diffraction microscopy. Lattice defects such as dislocations and two-dimensionally extended defects are observed only on one side of a twin boundary which is normal to the growth axis ⟨111⟩. Two-dimensional defect is concluded to be due to stacking fault from the study of the disappearance condition of the image with reflections. Fringe patterns due to stacking fualt is compared with the one due to a twinplane. The effect of heat-treatment on stacking faults are studied.