Abstract
The space-charge layer width and the junction capacitance of a hyper-abrupt p-n junction were studied, especially on the characteristics of temperature-dependence. The solution of Shockley’s equation in space-charge case gives a fairly good approximation of the characteristics of such a junction. The temperature dependence of the space-charge layer width can be explained mainly by the change in the built-in barrier voltage. However, there still remains a tendency that, at higher temperature, the space-charge layer width is narrower than that of the expected magnitude.