Piezoresistance of P-Type Germanium in Impurity Conduction Region

Abstract

Piezoresistance at large uniaxial compression along [001] has been measured in impurity conduction region of In-doped germanium with nearly constant compensation ratios. Resistivity has been extrapolated to large stress limit, and the impurity separation dependence of resistivity under no stress and under large stress limit has been obtained. From this result the effective Bohr radius of acceptor ground-state wave function of the unstressed state has been estimated and compared with a value derived from a simple theory.