抄録
A general discussion has been made on the factors which determine the type, number and size of secondary defects which are formed by vacancies in quenched face-centered cubic metals. A method of analysis, which uses the positive (growth) and negative (shrink) reaction ratios, has been introduced. This method is especially applicable for the analysis of the formation of such secondary defects that have weak bindings to vacancies at the initial stage of their formation.
The existence of the large negative reaction during a wide range of nucleation and growth of faulted dislocation loops in quenched aluminum (the existence of large clusters which are apt to maintain equilibrium with migrating defects) is confirmed experimentally, and the formation of the loop is analyzed by the method introduced. Nucleation and growth of perfect dislocation loops, double layer faulted dislocation loops, voids and stacking fault tetrahedra are also discussed.
