Density Distributions of Injected Plasma along the Length of Semiconductor Rods

抄録

The distribution of the high plasma density along the length of a long semiconductor rod of small radius is discussed theoretically, introducing the surface recombination rate. Assumptions used here are that there exists a high level injection only at one end of the semiconductor rod, that the diffusion current is much smaller than the drift current and that the radius of sample is much smaller than twice the diffusion length in the bulk of the sample with relatively small surface recombination velocity. The theory is in fairly good agreement with the experiments.