1965 年 20 巻 2 号 p. 229-236
The Hall coefficient and the mobility of p-type Ge were measured at 290°K and 195°K in the non-Ohmic or “hot electron” region by pulse technique. The Hall coefficient measured at 930 gauss decreased at much lower electric field compared with the case of the mobility. This was interpreted as the light hole mobility decreasing with increasing field more strongly than the heavy hole mobility. The data at 290°K were analyzed quantitatively on the assumption that the two types of holes have different temperatures.
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