Cyclotron Resonance Studies of Ge-Si And Ge-Sn Systems

抄録

Cyclotron resonance studies of the Ge-Si and Ge-Sn systems on the Ge side have been made with the aims of (1) exploring the electron scattering effect by the substituted isovalent impurity and (2) directly persuing the variation of the band parameters with the increasing percentage of the minority component of the alloy. The scattering cross section is found to be very small with the magnitude of less than one atomic cross sectional area, if any, for Sn and even smaller for Si. The variation of energy bands, or the effective mass properties, is in a qualitative agreement with the prediction of the pseudo-potential approach by Bassani et al. Comparison with the infrared absorption measurement by Braunstein shows a fairly good agreement in the low Si concentration range in the Ge-Si system.