Screened Impurity Potential in Si
1965 年 20 巻 5 号 p. 778-784
詳細
1965 年 20 巻 5 号 p. 778-784
The wave-number-dependent dielectric function is calculated for Si crystal along the three principal symmetry axes taking the detailed band structure into account. The effects of the core state, the higher bands and the Umklapp terms are found to be rather small. The value of 10.82±0.70 is obtained for the static dielectric constant in zero wave number limit, which is to be compared with the observed value of 11.7. Rather strong anisotropy and anomalous maximum are observed for relatively mall k.
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