Thermally Induced Acceptor Centers in Germanium

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In crystals with a very small dislocation density such as in germanium, a long time is necessary to obtain an equilibrium concentration of Schottky-type defects. This is verified by successive-quenching experiments. Analysis of the equilibration process of acceptor centers in n-type germanium at high temperatures gives the activation energy of about 2.0 eV. The formation energy of the thermally induced acceptors is found to be roughly 2 eV from the saturation values of the introduction curves of acceptors. Preliminary results of annealing of thermal acceptors are also described. The results are discussed in terms of vacancies thermally induced into the crystal.