Large Strain Dependence of the Impurity Breakdown in Compensated P-Type Germanium

抄録

To investigate the negative resistance mechanism of low temperature impurity breakdown in compensated P-type germanium, the variation of the critical field, E_c, and of the sustaining field, E_s, under strong uniaxial compressive stresses was studied. The ratio E_c⁄E_s in compensated samples was between 3 and 5 when no strain was produced. However, the ratio decreased with the stress down to values between 1.5 and 2 when a large strain was produced.
The changes of E_c and of E_s as a function of the acceptor ionization energy, ε₁, were found to be E_c∞(ε₁)^3⁄4 and E_s∞(ε₁)^5⁄4, respectively, at large strain region.
It was suggested that the energy loss mechanism by emission of the optical phonon may be responsible for the negative resistance of Cryosar phenomena.