Abstract
A general expression for the galvanomagnetic coefficients of hot electrons in an anisotropic medium is derived on the basis of the Boltzmann transport equation. The expression is applied to a nondegenerate piezoelectric semiconductor to understand the observed anisotropy and the field dependence of the Hall mobility of cadmium sulfide. Two mechanisms, piezoelectric and deformation potential scatterings, are considered, and a distribution function is derived by solving the Boltzmann equation directly. Satisfactory agreement between theory and experiment is obtained by taking the electron effective mass 0.17 m0 where m0 is the bare electron mass and the deformation potential constant Ξ=16±2 eV. The anisotropic effect at low temperatures is concluded to be due to the anisotropy of piezoelectric tensors which characterizes the scattering. Effects due to other scattering mechanisms are discussed.