Dyson Effect in the Electron Spin Resonance of Phosphorus Doped Silicon

Abstract

Dyson effect was investigated in the electron spin resonance of phosphorus doped silicon to know the dynamical characteristics of the paramagnetic center responsible for the single adsorption line around g-value of 2. Experiments were carried out at room, liquid nitrogen and liquid helium temperatures using samples of rod shape containing phosphorus atoms about 10¹⁷, 10¹⁸ and 10¹⁹ cm⁻³. Theoretical line shape was calculated to simulate the effect of parameters such as sample thickness, skin depth and diffusion time of electrons through the skin depth. The observed absorption line showed distortion consistent with the Dyson theory. The diffusion time was estimated to be several times of the electron spin relaxation time. Comparing with the diffusion time calculated from the electron mobility, a model is proposed that there might be two types of electron motion, namely rapid motion in an impurity cluster and slow transitions among the clusters.