抄録
Through experimentation on a zone-melting growth of a GaAs single crystal, the origin of both weak and strong surface oscillations of a melt has been investigated. The effect of increasing the temperature gradient for a constant rate of solidification is to increase the amplitude of these oscillations. The theoretical consideration analogous to both Cole-Winegard and Brice treatments on a GaAs melt has indicated a possible existence of a strong convective fluid flow in the melt with high temperature gradient about 50°C/cm at the growth interface. It is concluded that the strong convective fluid flow arising from the horizontal temperature gradient in a melt is one of the probable sources of these instabilities. The optimum growth conditions for the stable growth of a GaAs single crystal using the zone-melting method has been determined.
