1970 年 29 巻 6 号 p. 1470-1478
The temperature dependences of the magnetic susceptibilities and the transport coefficients are calculated for a simplified model of heavily doped semiconductors. The treatments are based on the Green function method for a disordered system which was developed in the two preceding papers of this series. A brief comparison with existing experiments on InSb, Ge, and Si is also made.
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