Second Order Electrical Resistivity Decay in Quenched Aluminum

抄録

Electrical resistivity has been measured on pure aluminum quenched from high temperatures (500°C∼600°C) and aged at low temperatures (−30°C∼−90°C). The decay of the quenched-in resistivity is perfectly second order after an initial transient. The process is concluded, from a discussion related to the clustering process of vacancies, to be controlled by the collision between single vacancies. The migration energy of the single vacancy E_m¹ and the difference between the migration energy of the divacancy E_m² and the binding energy of a divacancy B₂ arc determined to be E_m¹=0.64±0.02 eV and E_m²−B₂=0.39±0.02 eV, respectively. No long range interaction is found from the consideration of the coordination number of the collision between single vacancies.