Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs

抄録

The velocity-field characteristic in vapour-grown n-GaAs has been measured between 300 K and 4.2 K by using a microwave heating technique. The threshold field decreases with decreasing temperature on the contrary to the results by Ruch and Kino; this behaviour is in good agreement with the theory by Ruch and Fawcett. The negative differential mobility behaves in a similar way to the low field mobility between 300 K and 4.2 K. At temperatures below about 60 K, the electron mobility at fields up to 1 kV/cm becomes larger in magnitude than the low-field value because of decrease in ionized impurity scattering in hot electron region. The velocity-field relation up to 1 kV/cm is well explained in terms of polar optical phonon and ionized impurity scattering.