Vacancy Capture Radii of Impurity Atoms in Silicon
1974 年 36 巻 4 号 p. 1084-1086
詳細
1974 年 36 巻 4 号 p. 1084-1086
The interaction of a vacancy with group V impurity atoms in silicon has been studied. Vacancy capture radii were compared among group V impurity atoms As, Sb and Bi. Though absolute values are not given at this time, it is interesting to note the trend that the vacancy capture radius decreases as the covalent radius of impurity atom increases.
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