Pendellösung Measurement of the (222) Reflection in Silicon

抄録

The absolute value of the ‘forbidden’ (222) structure amplitude of silicon is measured by the Pendellösung method. Traverse topographs from a wedge-shaped, dislocation-free crystal are obtained at room temperature, using Cu Kα₁ radiation from a rotating anode generator. From the position of the first maximum of thickness fringes the F(222)e^−M value is derived as 1.64₅±.03₄.