Self-Trapped Electrons in Magnetic Semiconductors

抄録

The state of a self-trapped electron or a “magnetic polaron” in a magnetic semiconductor is investigated from a new point of view. The spatial variation of polarization of ionic spins around a conduction electron, which is ignored in the existing theories, is taken into account in calculating the binding energy of a magnetic polaron. The binding energy is plotted in a diagram against an appropriate single variable which characterizes the spatial distribution of spin polarization.