Electron Spin Resonance Study of Interacting Donor Clusters in Phosphorus-Doped Silicon at Low Temperatures. II. Overhauser Effect and Electron-Nuclear Double Resonance

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The peak shift of the central ESR line of P-doped Si has been measured as a function of microwave power at 46.1 GHz and 1.5 K. Also a change in the peak shift associated with NMR of ²⁹Si and ³¹P has been observed. This result confirms that the power-dependent peak shift arises from the nuclear fields by ³¹P and ²⁹Si enhanced by dynamical nuclear polarization due to the Overhauser effect. This ENDOR experiment also provides information about the amplitude of donor wave function around a donor site and the spatial fluctuation of the electron density on the donor site.