Electrical Resistivity of Liquid Te, Ga₂Te₃, In₂Te₃ and Tl₂Te under High Pressure

抄録

Electrical resistivity ρ of liquid semiconductors Te, Ga₂Te₃, In₂Te₃ and Tl₂Te has been measured up to 30 kbar and 900°C. The resistivity ρ of liquid Ga₂Te₃ and In₂Te₃ rapidly decreases with pressure in the low pressure region (\lesssim5 kbar), while ρ of liquid Tl₂Te gradually decreases in the wide pressure range. This difference is discussed in connection with the bonding character of constituent atoms.